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HOT-CARRIER MEMORY EFFECT IN AN AL/SIN/SIO2/SI MNOS DIODE DUE TO ELECTRICAL STRESS

被引：4
作者：
CHANG, CY
TZENG, FC
CHEN, CT
MAO, YW
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 09期
关键词：
D O I：
10.1109/EDL.1985.26188
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：448 / 449
页数：2
相关论文
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[6]   ROLE OF HOT-HOLE INJECTION IN HOT-CARRIER EFFECTS AND THE SMALL DEGRADED CHANNEL REGION IN MOSFETS [J].
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IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) :329-331
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