共 14 条
- [1] OXIDATION UNDER ELECTRON-BOMBARDMENT - A TOOL FOR STUDYING THE INITIAL STATES OF SILICON OXIDATION [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (06): : 721 - 733
- [3] OXIDATION OF SILICON WITH A 5 EV O--BEAM [J]. APPLIED PHYSICS LETTERS, 1989, 54 (05) : 421 - 423
- [4] VIBRATIONAL STUDY OF THE INITIAL-STAGES OF THE OXIDATION OF SI(111) AND SI(100) SURFACES [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (03): : 113 - 124
- [5] OXIDATION OF SI(111)-(7X7) AS STUDIED BY SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW B, 1988, 38 (08): : 5780 - 5783
- [7] INITIAL-STAGES OF OXYGEN-ADSORPTION ON SI(111) - THE STABLE STATE [J]. PHYSICAL REVIEW B, 1989, 39 (06): : 3720 - 3734
- [8] ODHOMARI I, IN PRESS SURF SCI
- [9] PELZ JP, IN PRESS
- [10] THE ROLE OF STRAIN IN SI(111)7X7 AND RELATED RECONSTRUCTED SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1966 - 1970