IN-PROCESS ELLIPSOMETRIC MONITORING OF DIAMOND FILM GROWTH BY MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：21

作者：

HAYASHI, Y ^{[1
]}

DRAWL, W ^{[1
]}

COLLINS, RW ^{[1
]}

MESSIER, R ^{[1
]}

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIV PK,PA 16802

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 23期

关键词：

D O I：

10.1063/1.106827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In-process monitoring of diamond film growth was performed with near-infrared ellipsometry (1550 nm). The trajectories in the ellipsometric parameters (psi,DELTA) differ according to the method of substrate pretreatment and the CO/H2 gas ratio used in the microwave plasma-enhanced chemical vapor deposition process. The nucleation density determined from ellipsometry shows qualitative agreement with that from scanning electron microscopy performed after deposition. The rate at which nuclei develop is also monitored, and the observed induction time is shorter for conditions leading to a higher nucleation density.

引用

页码：2868 / 2870

页数：3

共 9 条

[1]

BACHMANN PK, 1988, DIAMOND DIAMOND LIKE, P99

[2] Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances [J].