THE EFFECT OF FOWLER-NORHEIM TUNNELING CURRENT STRESS ON MOBILITY IN N-CHANNEL MOSFETS

被引：2

作者：

AKIZAWA, M

MATSUMOTO, S

机构：

[1] Keio Univ, Hiyoshi, Jpn, Keio Univ, Hiyoshi, Jpn

来源：

关键词：

D O I：

10.1109/16.2445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：245 / 246

页数：2

共 9 条

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[2]

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HOSOI, T ;

AKIZAWA, M ;

MATSUMOTO, S .

[4]

Jeng C. S., 1981, International Electron Devices Meeting, P388

KNOLL, M ;

BRAUNIG, D ;

FAHRNER, WR .

[6]

Liang M., 1981, INT EL DEV M INT EL DEV M, P396

[7]

Liang M. S., 1982, International Electron Devices Meeting. Technical Digest, P50

[8] EFFECT OF COULOMB SCATTERING IN N-TYPE SILICON INVERSION-LAYERS [J].

MANZINI, S .

[9]

SNOW FH, 1967, SOLID STATE COMMUN, V5, P813