MOLECULAR-BEAM EPITAXY OF GASB AND INGASB

被引：21

作者：

KODAMA, M

KIMATA, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 73卷 / 03期

关键词：

D O I：

10.1016/0022-0248(85)90031-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：641 / 645

页数：5

共 14 条

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[8] ROOM-TEMPERATURE OPERATION OF AL0.17GA0.83SB/GASB MULTI-QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[10] PLASMA-ASSISTED EPITAXIAL-GROWTH OF GASB IN HYDROGEN PLASMA [J].

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