BARRIER HEIGHT OF HF-GAAS DIODE

被引:5
作者
KAJIYAMA, K
SAKATA, S
OCHI, O
机构
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D O I
10.1063/1.321980
中图分类号
O59 [应用物理学];
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页码:3221 / 3222
页数:2
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[1]   DETERMINATION OF HAFNIUM-P-TYPE SILICON SCHOTTKY-BARRIER HEIGHT [J].
BEGUWALA, M ;
CROWELL, CR .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2792-2794
[2]   SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].
COWLEY, AM ;
SZE, SM .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&
[3]   THERMIONIC CONSTANTS AND SORPTION PROPERTIES OF HAFNIUM [J].
HAGSTRUM, HD .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (03) :323-328
[4]   SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].
KAJIYAMA, K ;
MIZUSHIMA, Y ;
SAKATA, S .
APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459
[5]   SCHOTTKY-BARRIER DEVICES WITH LOW BARRIER HEIGHT [J].
KAJIYAMA, K ;
SAKATA, S ;
MIZUSHIM.Y .
PROCEEDINGS OF THE IEEE, 1974, 62 (09) :1287-1288
[7]   KINETICS OF FORMATION OF HAFNIUM SILICIDES ON SILICON [J].
ZIEGLER, JF ;
MAYER, JW ;
KIRCHER, CJ ;
TU, KN .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :3851-3857