MINORITY-CARRIER LIFETIME OF MAGNETIC-FIELD APPLIED CZOCHRALSKI SILICON-WAFERS

被引:7
作者
HIGUCHI, T
GAYLORD, E
ROZGONYI, GA
SHIMURA, F
机构
关键词
D O I
10.1063/1.100374
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1850 / 1852
页数:3
相关论文
共 22 条
[1]  
Abe T., 1986, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, P537
[2]   MELTING OF SILICON-CRYSTALS AND A POSSIBLE ORIGIN OF SWIRL DEFECTS [J].
CHIKAWA, J ;
SHIRAI, S .
JOURNAL OF CRYSTAL GROWTH, 1977, 39 (02) :328-340
[3]  
DEKOCK AJR, 1973, SEMICONDUCTOR SILICO, P83
[4]  
FUTAGAMI M, 1986, SEMICONDUCTOR SILICO, P939
[5]  
GOSNEY WM, 1980, LIFETIME FACTORS SIL, P58
[6]   CARRIER LIFETIME OF HEAT-TREATED SILICON-CRYSTALS [J].
GRAFF, K ;
PIEPER, H .
JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (02) :281-298
[7]  
Graff K., 1979, Solar energy conversion. Solid-state physics aspects, P173
[9]  
HOSHI K, 1980, EXTENDED ABSTRACTS E, P811
[10]   RECOMBINATION LIFETIME IN OXYGEN-PRECIPITATED SILICON [J].
HWANG, JM ;
SCHRODER, DK ;
GOODMAN, AM .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) :172-174