RECOMBINATION LIFETIME IN OXYGEN-PRECIPITATED SILICON

[1] OXYGEN PRECIPITATION EFFECTS ON SI-N+-P JUNCTION LEAKAGE BEHAVIOR [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 581 - 583

[2] Chan S. S., 1985, MATER RES SOC S P, V46, P281

[3] INFRARED SPECTROSCOPICAL AND TEM INVESTIGATIONS OF OXYGEN PRECIPITATION IN SILICON-CRYSTALS WITH MEDIUM AND HIGH OXYGEN CONCENTRATIONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (01): : 133 - 147

[4] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[5] GOODMAN AM, 1983, RCA REV, V44, P326

[6] HOELZLEIN K, 1984, APPL PHYS A, V34, P155

[7] HWANG JS, UNPUB J APPL PHYS

[8] MEASUREMENT OF INTERFACE DEFECT STATES AT OXIDIZED SILICON SURFACES BY CONSTANT-CAPACITANCE DLTS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1407 - 1411

[9] JOHNSON NM, 1978, PHYSICS SIO2 ITS INT, P421

[10] THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 516 - 525

[1] OXYGEN PRECIPITATION EFFECTS ON SI-N+-P JUNCTION LEAKAGE BEHAVIOR [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 581 - 583

[2] Chan S. S., 1985, MATER RES SOC S P, V46, P281

[3] INFRARED SPECTROSCOPICAL AND TEM INVESTIGATIONS OF OXYGEN PRECIPITATION IN SILICON-CRYSTALS WITH MEDIUM AND HIGH OXYGEN CONCENTRATIONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (01): : 133 - 147

[4] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[5] GOODMAN AM, 1983, RCA REV, V44, P326

[6] HOELZLEIN K, 1984, APPL PHYS A, V34, P155

[7] HWANG JS, UNPUB J APPL PHYS

[8] MEASUREMENT OF INTERFACE DEFECT STATES AT OXIDIZED SILICON SURFACES BY CONSTANT-CAPACITANCE DLTS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1407 - 1411

[9] JOHNSON NM, 1978, PHYSICS SIO2 ITS INT, P421

[10] THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 516 - 525