GAAS PN DIODES WITH HEAVILY CARBON-DOPED P-TYPE GAAS GROWN BY MOMBE

被引：7

作者：

NOZAKI, S

MIYAKE, R

YAMADA, T

KONAGAI, M

TAKAHASHI, K

机构：

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, 152, 2-12-1 O-okayama, Meguro-kuy

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 10期

关键词：

Carbon; Diffusion length; EBIC; Heavy doping; Lattice mismatch; MOMBE; Pn diode; Spectral response;

D O I：

10.1143/JJAP.29.L1731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs pn diodes with heavily carbon-doped p-type GaAs grown by MOMBE were fabricated. The I-V and C-V characteristics were not significantly affected by the hole concentration of the p-GaAs although a lattice mismatch at the junction generates misfit dislocations. A good I-V characteristic with the ideality factor of 1.3 was obtained even for the carbon-doped GaAs with a hole concentration of as high as 5×1020cm-3. The electron diffusion lengths in the carbon-doped GaAs were determined to be 1.0, 0.45 and 0.25 µm for hole concentrations of 2×1018, 1×1020and 5×1020cm-3, respectively, by EBIC and spectral response measurements. © 1990 IOP Publishing Ltd.

引用

页码：L1731 / L1734

页数：4

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