CRYSTALLINITY AND SCHOTTKY DIODE CHARACTERISTICS OF GAAS GROWN ON SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：11

作者：

EGAWA, T

NOZAKI, S

NOTO, N

SOGA, T

JIMBO, T

UMENO, M

机构：

[1] Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku, Nagoya 466, Gokiso-cho

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 11期

关键词：

D O I：

10.1063/1.345083

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The crystallinity of GaAs grown on Si with various intermediate layers by metalorganic chemical vapor deposition and characteristics of Schottky diodes fabricated on the grown GaAs/Si have been studied. The GaAs/Si with an Al 0.55Ga0.45P intermediate layer has both good crystallinity, x-ray full width at half maximum of 188 arc sec, and a smooth surface. The Schottky diode fabricated on the GaAs/Si with an Al 0.55Ga0.45P intermediate layer also shows good forward and reverse current-voltage characteristics with an ideality factor of 1.06, as good as for an n-type GaAs substrate. However, a relatively large leakage current is observed under reverse and small forward bias. This leakage current is caused by generation and recombination through the centers related to dislocations in the GaAs/Si.

引用

页码：6908 / 6913

页数：6

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