OSCILLATORY INSTABILITY IN THE HETEROSTRUCTURE HOT-ELECTRON DIODE

被引：17

作者：

WACKER, A

SCHOLL, E

机构：

[1] Institut für Theoretische Physik, Technische Universität Berlin, W-1000 Berlin 12

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 14期

关键词：

D O I：

10.1063/1.106223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vertical electrical transport in the heterostructure hot-electron diode is considered theoretically. We present a simple dynamical model which consistently explains the measured S-shaped negative differential conductivity in the current-voltage characteristics. The model predicts a new type of self-sustained 60 GHz voltage oscillations between tunneling and thermionic emission if the sample is driven by a dc voltage source having a resistor in series and a capacitor in parallel.

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页码：1702 / 1704

页数：3

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