ELECTRIC-FIELD EFFECT OF SRTIO3/YBA2CU3O7-X MULTILAYERS GROWN BY ALL-MBE

被引：9

作者：

NAKAMURA, T

TOKUDA, H

IIYAMA, M

机构：

[1] Systems & Electronics R&D Center, Sumitomo Electric Industries, LTD., Osaka 554, 1-1-3, Shimaya, Konohana-ku

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1995年 / 5卷 / 02期

关键词：

D O I：

10.1109/77.403192

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial SrTiO3/YBa2Cu3O7-x (STO/YBCO) multilayers fora superconducting field-effect transistor (SuFET) were fabricated by an ozone assisted Molecular Beam Epitaxcy (MBE) method. To eliminate interdiffusion at the interface, we deposited high quality STO films at around 500 degrees C on YBCO films with clean surfaces. At this temperature, interdiffusion was negligible through in-situ Auger Electron Spectroscopy (AES). The electric field effect in a Ag/STO/YBCO device configuration also indicated the suppression of the interfacial layer between the STO and YBCO film.

引用

页码：2875 / 2878

页数：4

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