MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY

被引：409

作者：

LANG, DV

COHEN, JD

HARBISON, JP

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.25.5285

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：5285 / 5320

页数：36

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