EFFECTS OF HIGH-LEVELS OF BE IN GAAS BY MBE

被引：11

作者：

ENQUIST, P ^{[1
]}

LUNARDI, LM ^{[1
]}

WICKS, GW ^{[1
]}

EASTMAN, LF ^{[1
]}

HITZMAN, C ^{[1
]}

机构：

[1] CHARLES EVANS ASSOC, SAN MATEO, CA 94402 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：634 / 635

页数：2

共 11 条

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EVANS, CA .

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[2] INFLUENCE OF GROWTH TEMPERATURE ON BE INCORPORATION IN MOLECULAR-BEAM EPITAXY GAAS EPILAYERS [J].

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HENOC, P ;

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RAO, EVK .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :49-51

[3] DIFFUSION OF ZINC IN GALLIUM-ARSENIDE - A NEW MODEL [J].

GOSELE, U ;

MOREHEAD, F .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4617-4619

[4] A STUDY OF THE EFFECTS OF ANNEALING, ZINC DIFFUSION AND COPPER DIFFUSION ON THE DEFECT STRUCTURE OF SILICON-DOPED GALLIUM-ARSENIDE [J].

HUTCHINSON, PW ;

BALL, RK .

JOURNAL OF MATERIALS SCIENCE, 1982, 17 (02) :406-416

[5] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

ILEGEMS, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1278-1287

[6] ANNEALING STUDIES OF BE-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MCLEVIGE, WV ;

VAIDYANATHAN, KV ;

STREETMAN, BG ;

ILEGEMS, M ;

COMAS, J ;

PLEW, L .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :127-129

[7]

MILLER JN, 1983, ELECTRONIC MATERIALS

[8] ANOMALOUS DIFFUSION PROFILES OF ZINC IN GAAS [J].

TUCK, B ;

KADHIM, MAH .

JOURNAL OF MATERIALS SCIENCE, 1972, 7 (05) :581-&

[9] EXAMINATION OF MODELS FOR ZN DIFFUSION IN GAAS [J].

VANOMMEN, AH .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5055-5058

[10] DIFFUSION WITH INTERSTITIAL-SUBSTITUTIONAL EQUILIBRIUM - ZINC IN GAAS [J].

WEISBERG, LR ;

BLANC, J .

PHYSICAL REVIEW, 1963, 131 (04) :1548-&

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