OPERATION OF A CMOS MICROPROCESSOR WHILE IMMERSED IN LIQUID-NITROGEN

被引：13

作者：

COLONNAROMANO, LM

DEVERELL, DR

机构：

[1] Digital Equipment Corp, Hudson, MA,, USA, Digital Equipment Corp, Hudson, MA, USA

来源：

关键词：

D O I：

10.1109/JSSC.1986.1052556

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：491 / 492

页数：2

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[2]

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[3]

Kato I., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P601

[4] P-MOSFET PARAMETERS AT CRYOGENIC TEMPERATURES [J].

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[5]

Schrankler J. W., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P598

TEWKSBURY, SK .

[7] ELECTRON TRAPPING IN SIO2 AT 295 AND 77-DEGREES-K [J].

YOUNG, DR ;

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DEKEERSMAECKER, RF ;

MASSOUD, HZ .

[8]

1983, DCJ11 MICROPROCESSOR