TRAP DISTRIBUTION IN GOLD-REFRACTORY GAAS SCHOTTKY BARRIERS

被引：12

作者：

CHRISTOU, A

ANDERSON, WT

DAY, HM

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 04期

关键词：

D O I：

10.1016/0038-1101(85)90093-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：329 / 338

页数：10

共 17 条

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[10] THE THERMAL-STABILITY OF THIN-LAYER TRANSITION AND REFRACTORY METALLIZATIONS ON GAAS [J].

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