SCAN SPEED EFFECTS ON ENHANCED DISORDERING OF GAAS-ALGAAS SUPERLATTICES BY FOCUSED SI ION-BEAM IMPLANTATION

被引：8

作者：

ISHIDA, K ^{[1
]}

MATSUI, K ^{[1
]}

FUKUNAGA, T ^{[1
]}

KOBAYASHI, J ^{[1
]}

MORITA, T ^{[1
]}

MIYAUCHI, E ^{[1
]}

NAKASHIMA, H ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 02期

关键词：

D O I：

10.1063/1.98639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：109 / 111

页数：3

共 16 条

[1]

BROWN WL, 1983, P INT ION ENG C ISIA, pA1738

[2] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J].

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HOLONYAK, N .

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[3]

FUKUNAGA T, INT PHYS C SER, V79, P439

[4] GAALAS BURIED MULTIQUANTUM WELL LASERS FABRICATED BY DIFFUSION-INDUCED DISORDERING [J].

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SEMURA, S ;

SAITO, H ;

OHTA, T ;

UCHIDA, Y ;

NAKASHIMA, H .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :1-3

[5]

GAVRIOVIC P, 1985, APPL PHYS LETT, V57, P130

[6]

HASHIMOTO H, 1984, 16TH C SOL STAT DEV, P121

[7] FABRICATION OF INDEX-GUIDED ALGAAS MULTIQUANTUM WELL LASERS WITH BURIED OPTICAL GUIDE BY SI-INDUCED DISORDERING [J].

ISHIDA, K ;

MATSUI, K ;

FUKUNAGA, T ;

TAKAMORI, T ;

NAKASHIMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (08) :L690-L692

[8] FABRICATION OF INDEX-GUIDED ALGAAS MQW LASERS BY SELECTIVE DISORDERING USING BE FOCUSED ION-BEAM IMPLANTATION [J].

ISHIDA, K ;

TAKAMORI, T ;

MATSUI, K ;

FUKUNAGA, T ;

MORITA, T ;

MIYAUCHI, E ;

HASHIMOTO, H ;

NAKASHIMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (09) :L783-L785

[9] EFFECTS OF BE AND SI ON DISORDERING OF THE ALAS/GAAS SUPERLATTICE [J].

KAWABE, M ;

SHIMIZU, N ;

HASEGAWA, F ;

NANNICHI, Y .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :849-850

[10] SIMS STUDY OF COMPOSITIONAL DISORDERING IN SI ION-IMPLANTED ALGAAS-GAAS SUPERLATTICE [J].

KOBAYASHI, J ;

NAKAJIMA, M ;

BAMBA, Y ;

FUKUNAGA, T ;

MATSUI, K ;

ISHIDA, K ;

NAKASHIMA, H ;

ISHIDA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (05) :L385-L387

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