HIGH-QUALITY NIOBIUM NITRIDE NIOBIUM JOSEPHSON TUNNEL-JUNCTIONS

被引:11
作者
CUKAUSKAS, EJ [1 ]
NISENOFF, M [1 ]
JILLIE, DW [1 ]
KROGER, H [1 ]
SMITH, LN [1 ]
机构
[1] SPERRY RAND CORP,RES CTR,SUDBURY,MA 01776
关键词
D O I
10.1109/TMAG.1983.1062554
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:831 / 834
页数:4
相关论文
共 14 条
  • [1] FABRICATION AND PROPERTIES OF NIOBIUM JOSEPHSON TUNNEL-JUNCTIONS
    BROOM, RF
    LAIBOWITZ, RB
    MOHR, TO
    WALTER, W
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) : 212 - 222
  • [2] NIOBIUM OXIDE BARRIER TUNNEL JUNCTION
    BROOM, RF
    RAIDER, SI
    OOSENBRUG, A
    DRAKE, RE
    WALTER, W
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (10) : 1998 - 2008
  • [3] CUKAUSKAS EJ, 1983, UNPUB J APPL PHY FEB
  • [4] GURVITCH M, UNPUB APPL PHYS LETT
  • [5] HALBRITTER J, UNPUB SURFACE SCI
  • [6] NIOBIUM NITRIDE NIOBIUM JOSEPHSON TUNNEL-JUNCTIONS WITH SPUTTERED AMORPHOUS-SILICON BARRIERS
    JILLIE, DW
    KROGER, H
    SMITH, LN
    CUKAUSKAS, EJ
    NISENOFF, M
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 747 - 750
  • [7] NEW TECHNIQUE FOR ELECTRON-TUNNELING JUNCTION FABRICATION AND ITS APPLICATION TO TANTALUM AND NIOBIUM
    KEITH, V
    LESLIE, JD
    [J]. PHYSICAL REVIEW B, 1978, 18 (09): : 4739 - 4761
  • [8] SELECTIVE NIOBIUM ANODIZATION PROCESS FOR FABRICATING JOSEPHSON TUNNEL-JUNCTIONS
    KROGER, H
    SMITH, LN
    JILLIE, DW
    [J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 280 - 282
  • [9] NIOBIUM NITRIDE JOSEPHSON TUNNEL-JUNCTIONS WITH OXIDIZED AMORPHOUS-SILICON BARRIERS
    SHINOKI, F
    SHOJI, A
    KOSAKA, S
    TAKADA, S
    HAYAKAWA, H
    [J]. APPLIED PHYSICS LETTERS, 1981, 38 (04) : 285 - 286
  • [10] JOSEPHSON TUNNEL-JUNCTIONS WITH NB, NBN DOUBLE-LAYERED ELECTRODES
    SHOJI, A
    SHINOKI, F
    KOSAKA, S
    HAYAKAWA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04): : L192 - L194