EFFECTS OF ELECTRON-BEAM RADIATION ON MOS STRUCTURES AS INFLUENCED BY SILICON DOPANT

被引：80

作者：

SCOGGAN, GA ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] IBM CORP, DIV SYST PROD, HOPEWELL JUNCTION, NY 12533 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 01期

关键词：

D O I：

10.1063/1.323376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：294 / 300

页数：7

相关论文

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