MEASUREMENT OF GA AND AL IN A MOLECULAR-BEAM EPITAXY CHAMBER BY ATOMIC-ABSORPTION SPECTROMETRY (AAS)

被引：26

作者：

KOMETANI, TY ^{[1
]}

WIEGMANN, W ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1975年 / 12卷 / 04期

关键词：

D O I：

10.1116/1.568703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：933 / 936

页数：4

共 11 条

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[2] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
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[3] GROWTH OF A GAAS-GAAIAS SUPERLATTICE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01): : 11 - 16
[4] CHO AY, 1971, J VAC SCI TECHNOL, V8, P531
[5] ELECTROMAGNETIC MODES OF ANISOTROPIC DIELECTRIC WAVE GUIDES AT P-N JUNCTIONS
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[6] DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/CM2
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[J]. APPLIED PHYSICS LETTERS, 1970, 16 (08) : 326 - &
[7] THERMODYNAMIC PROPERTIES OF SOLID AU-ZN ALLOYS BY ATOMIC ABSORPTION SPECTROSCOPY
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[J]. METALLURGICAL TRANSACTIONS, 1971, 2 (01): : 79 - &
[8] PEMSLER JP, 1969, T METALL SOC AIME, V245, P1395
[9] PEMSLER JP, 1972, ANAL CHIM ACTA, V58, P15, DOI 10.1016/S0003-2670(00)86849-X
[10] 3-DIMENSIONAL LIGHT GUIDES IN SINGLE-CRYSTAL GAAS-ALXGA1-XAS
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[J]. APPLIED PHYSICS LETTERS, 1973, 22 (10) : 511 - 512