SIMULATION OF PLASMA-ASSISTED ETCHING PROCESSES BY ION-BEAM TECHNIQUES

[1] SURFACE-COMPOSITION AND ETCHING OF III-V SEMICONDUCTORS IN CL-2 ION-BEAMS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 583 - 586

[2] BARKER RA, J VAC SCI TECHNOL

[3] BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338

[4] PROFILE CONTROL WITH DC BIAS IN PLASMA-ETCHING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 393 - 396

[5] CANTAGREL M, 1973, J MATER SCI, V8, P1711, DOI 10.1007/BF02403521

[6] REACTIVE ION-BEAM SPUTTERING OF THIN-FILMS OF LEAD, ZIRCONIUM AND TITANIUM [J]. THIN SOLID FILMS, 1977, 46 (02) : 213 - 221

[7] HYDROGEN PLASMA-ETCHING OF SEMICONDUCTORS AND THEIR OXIDES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (01): : 45 - 50

[8] Chapman B., 1980, GLOW DISCHARGE PROCE

[9] CHAPMAN BN, 1978, JVST, V15, P239

[10] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619

[1] SURFACE-COMPOSITION AND ETCHING OF III-V SEMICONDUCTORS IN CL-2 ION-BEAMS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 583 - 586

[2] BARKER RA, J VAC SCI TECHNOL

[3] BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338

[4] PROFILE CONTROL WITH DC BIAS IN PLASMA-ETCHING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 393 - 396

[5] CANTAGREL M, 1973, J MATER SCI, V8, P1711, DOI 10.1007/BF02403521

[6] REACTIVE ION-BEAM SPUTTERING OF THIN-FILMS OF LEAD, ZIRCONIUM AND TITANIUM [J]. THIN SOLID FILMS, 1977, 46 (02) : 213 - 221

[7] HYDROGEN PLASMA-ETCHING OF SEMICONDUCTORS AND THEIR OXIDES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (01): : 45 - 50

[8] Chapman B., 1980, GLOW DISCHARGE PROCE

[9] CHAPMAN BN, 1978, JVST, V15, P239

[10] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619