TIGHT-BINDING CALCULATIONS OF (111) SURFACE DENSITIES OF STATES OF GE AND GAAS

被引：11

作者：

CHADI, DJ

COHEN, ML

机构：

[1] UNIV CALIF,DEPT PHYS,LOS ANGELES,CA 90024

[2] LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA 94720

来源：

SOLID STATE COMMUNICATIONS | 1975年 / 16卷 / 06期

关键词：

D O I：

10.1016/0038-1098(75)90054-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：691 / 694

页数：4

共 18 条

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HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1974, 32 (05) :225-228

[4]

CHADI DJ, TO BE PUBLISHED

[5] OPTICAL DETECTION OF SURFACE STATES ON CLEAVED (111) SURFACES OF GE [J].

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NANNARONE, S .

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[6] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J].

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NANNARONE, S ;

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CHIARADIA, P .

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[7] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

EASTMAN, DE ;

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PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&

[8]

FALICOV LM, TO BE PUBLISHED

[9]

FISHER TE, 1968, SURF SCI, V10, P399

[10] PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J].

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