INVESTIGATION OF SEMICONDUCTOR STRUCTURES USING BACKSCATTERING OF MEV PARTICLES

被引：2

作者：

BARCZ, A ^{[1
]}

TUROS, A ^{[1
]}

WIELUNSKI, L ^{[1
]}

机构：

[1] INST NUCL RES,NUCL REACTIONS DEPT,WARSAW 91,POLAND

来源：

INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES | 1975年 / 26卷 / 05期

关键词：

D O I：

10.1016/0020-708X(75)90155-6

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：227 / 232

页数：6

共 12 条

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[8] ANALYSIS OF AMORPHOUS LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS [J].

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