ON THE PLASTICITY OF SILICON BELOW 650-DEGREES-C

被引：13

作者：

DEMENET, JL

DESOYER, JC

RABIER, J

VEYSSIERE, P

机构：

来源：

SCRIPTA METALLURGICA | 1984年 / 18卷 / 01期

关键词：

D O I：

10.1016/0036-9748(84)90086-3

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：41 / 45

页数：5

共 8 条

[1]

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PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (06) :1407-1413

[3] EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON [J].

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OSVENSKII, VB .

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[4] VELOCITIES OF SCREW AND 60-DEGREES DISLOCATIONS IN N-TYPE AND P-TYPE SILICON [J].

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[5] ON THE MOBILITY OF DISLOCATIONS IN SILICON BY INSITU STRAINING IN A HIGH-VOLTAGE ELECTRON-MICROSCOPE [J].

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PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 43 (05) :1289-1297

[6]

OMRI M, 1981, THESIS NANCY

[7]

RABIER J, 1983, INT C PROPERTIES STR

[8] MOBILITY OF PARTIAL DISLOCATIONS IN SILICON [J].

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PHILOSOPHICAL MAGAZINE, 1977, 35 (06) :1523-1536

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