ON THE MOBILITY OF DISLOCATIONS IN SILICON BY INSITU STRAINING IN A HIGH-VOLTAGE ELECTRON-MICROSCOPE

被引：50

作者：

LOUCHET, F

机构：

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1981年 / 43卷 / 05期

关键词：

D O I：

10.1080/01418618108236157

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1289 / 1297

页数：9

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[9] INSITU DEFORMATION OF BCC CRYSTALS AT LOW-TEMPERATURES IN A HIGH-VOLTAGE ELECTRON-MICROSCOPE DISLOCATION MECHANISMS AND STRAIN-RATE EQUATION [J].

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