ELECTRICAL CHARACTERIZATION OF GALLIUM PLANAR-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

被引:10
作者
SHIBLI, SM [1 ]
TAMARGO, MC [1 ]
DEMIGUEL, JL [1 ]
SKROMME, BJ [1 ]
NAHORY, RE [1 ]
FARRELL, HH [1 ]
机构
[1] BELLCORE,RED BANK,NJ 07701
关键词
D O I
10.1063/1.343974
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:4295 / 4300
页数:6
相关论文
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