LOW (2.0 KA/CM2) THRESHOLD CURRENT-DENSITY OPERATION OF 629 NM GAINP/AIINP MULTIQUANTUM WELL LASERS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY ON 15-DEGREES OFF (100) GAAS SUBSTRATES

被引：14

作者：

KIKUCHI, A ^{[1
]}

KISHINO, K ^{[1
]}

KANEKO, Y ^{[1
]}

机构：

[1] SOPHIA UNIV,DEPT ELECT & ELECTR ENGN,7-1 KIOI CHO,CHIYODA KU,TOKYO 102,JAPAN

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 14期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19910814

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Very low threshold current density operation of 630 nm wavelength range GaInP/AlInP multiquantum well (MQW) lasers grown by gas source molecular beam epitaxy has been achieved. The reduction of threshold current density J(th) was obtained by use of 15-degrees off (100) toward [011] GaAs substrates, with a minimum J(th) of 2.0 kA/cm2 at 629 nm. The J(th) of the lasers grown on the exact oriented (100) substrates was 2.9 kA/cm2 at minimum, which was about 1.4 times larger than the above value.

引用

页码：1301 / 1303

页数：3

共 10 条

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