NMOS SILICIDE POLYSILICON GATES BY LIFT-OFF REACTIVE SPUTTER ETCHING

[1] ADAMS AC, 1981, J ELECTROCHEM SOC, V128, P1548

[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[3] TANTALUM SILICIDE POLYCRYSTALLINE SILICON - HIGH CONDUCTIVITY GATES FOR CMOS LSI APPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 345 - 348

[4] IWO HM, 1976, EL SOC ABSTR, P324

[5] HIGH-RESOLUTION, STEEP PROFILE RESIST PATTERNS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1620 - 1624

[6] REINBERGH AR, 1974, ELECTROCHEM SOC EXT, V6, P19

[7] MOS COMPATIBILITY OF HIGH-CONDUCTIVITY TASI2-N+ POLY-SI GATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1425 - 1430

[1] ADAMS AC, 1981, J ELECTROCHEM SOC, V128, P1548

[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[3] TANTALUM SILICIDE POLYCRYSTALLINE SILICON - HIGH CONDUCTIVITY GATES FOR CMOS LSI APPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 345 - 348

[4] IWO HM, 1976, EL SOC ABSTR, P324

[5] HIGH-RESOLUTION, STEEP PROFILE RESIST PATTERNS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1620 - 1624

[6] REINBERGH AR, 1974, ELECTROCHEM SOC EXT, V6, P19

[7] MOS COMPATIBILITY OF HIGH-CONDUCTIVITY TASI2-N+ POLY-SI GATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1425 - 1430