LOW SURFACE CONCENTRATION OF BORON IN SILICON BY DIFFUSION THROUGH SILICON DIOXIDE

被引：5

作者：

MUENCH, WV ^{[1
]}

GESSERT, C ^{[1
]}

机构：

[1] TECH UNIV HANOVER,INST WERKSTOFFKUNDE A,D-3000 HANOVER,FED REP GER

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 12期

关键词：

D O I：

10.1149/1.2134110

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1685 / 1689

页数：5

共 11 条

[1] EFFECT OF OXIDE LAYERS ON THE DIFFUSION OF PHOSPHORUS INTO SILICON [J].

ALLEN, RB ;

BERNSTEIN, H ;

KURTZ, AD .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) :334-337

[2] BORON-DIFFUSION IN SILICON-CONCENTRATION AND ORIENTATION DEPENDENCE, BACKGROUND EFFECTS, AND PROFILE ESTIMATION [J].

FAIR, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) :800-805

[3]

GESSERT C, TO BE PUBLISHED

[4] DIFFUSIVITY SUMMARY OF B, GA, P, AS, AND SB IN SIO2 [J].

GHEZZO, M ;

BROWN, DM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :146-148

[5] LOW PHOSPHORUS CONCENTRATIONS IN SI BY DIFFUSION FROM DOPED OXIDE LAYERS [J].

MIDDELHOEK, J ;

HOLLEMAN, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (01) :132-137

[6]

MIDDELHOEK J, 1973, REPORT TECHNISCHE HO

[7]

MUENCH WV, 1968, 2ND P INT S GALL ARS, P77

[8]

SHORTES SR, 1964, T METALL SOC AIME, V230, P300

[9] DIFFUSION OF GALLIUM THROUGH SILICON DIOXIDE FILMS INTO SILICON [J].

WAGNER, S ;

POVILONIS, EI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (11) :1487-1496

[10]

Yamaguchi J., 1962, JAPANESE J APPL PHYS, V1, P314

← 1 2 →