PHOTOLUMINESCENCE LINEWIDTH SYSTEMATICS FOR SEMICONDUCTOR QUANTUM WELL STRUCTURES WITH GRADED INTERFACE COMPOSITION PROFILE

被引：4

作者：

OGALE, SB ^{[1
]}

MADHUKAR, A ^{[1
]}

CHO, NM ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI & ENGN,LOS ANGELES,CA 90089

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.340092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：578 / 580

页数：3

共 19 条

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[8] ATOMISTIC NATURE OF HETEROINTERFACES IN III-V SEMICONDUCTOR-BASED QUANTUM-WELL STRUCTURES AND ITS CONSEQUENCES FOR PHOTOLUMINESCENCE BEHAVIOR [J].

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[10] INFLUENCE OF TRANSVERSE ELECTRIC-FIELD ON THE PHOTOLUMINESCENCE LINEWIDTH OF EXCITONIC-TRANSITION IN QUANTUM-WELLS - ALLOY DISORDER AND COMPOSITION FLUCTUATION CONTRIBUTIONS [J].

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CHO, NM .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1381-1384

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