AUGER DEPTH PROFILING STUDIES OF INTERDIFFUSION AND CHEMICAL TRAPPING AT METAL-INP INTERFACES

被引：13

作者：

SHAPIRA, Y

BRILLSON, LJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：618 / 622

页数：5

共 23 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[2] INTERACTION OF METALS WITH SEMICONDUCTOR SURFACES [J].

BRILLSON, LJ .

APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL) :249-267

[3] ATOMIC MODULATION OF INTER-DIFFUSION AT AU-GAAS INTERFACES [J].

BRILLSON, LJ ;

MARGARITONDO, G ;

STOFFEL, NG .

PHYSICAL REVIEW LETTERS, 1980, 44 (10) :667-670

[4] CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION [J].

BRILLSON, LJ ;

BRUCKER, CF ;

KATNANI, AD ;

STOFFEL, NG ;

MARGARITONDO, G .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :784-786

[5] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR [J].

BRILLSON, LJ ;

BRUCKER, CF ;

KATNANI, AD ;

STOFFEL, NG ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :661-666

[6] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J].

BRILLSON, LJ ;

BRUCKER, CF ;

STOFFEL, NG ;

KATNANI, AD ;

MARGARITONDO, G .

PHYSICAL REVIEW LETTERS, 1981, 46 (13) :838-841

[7] FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES [J].

BRILLSON, LJ ;

BRUCKER, CF ;

KATNANI, AD ;

STOFFEL, NG ;

DANIELS, R ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :564-569

[8] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].

BRILLSON, LJ .

PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263

[9] VACANCIES NEAR SEMICONDUCTOR SURFACES [J].

DAW, MS ;

SMITH, DL .

PHYSICAL REVIEW B, 1979, 20 (12) :5150-5156

[10] SURFACE VACANCIES IN INP AND GAAIAS [J].

DAW, MS ;

SMITH, DL .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :690-692

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