VELOCITY-FIELD CHARACTERISTICS OF ELECTRONS IN DOPED GAAS

被引：18

作者：

MASSELINK, WT

KUECH, TF

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 05期

关键词：

D O I：

10.1007/BF02657469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：579 / 584

页数：6

共 21 条

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[9] ELECTRON VELOCITY AT HIGH ELECTRIC-FIELDS IN ALGAAS/GAAS MODULATION-DOPED HETEROSTRUCTURES [J].

MASSELINK, WT ;

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WANG, WI ;

WRIGHT, SL .

SOLID-STATE ELECTRONICS, 1988, 31 (3-4) :337-340

[10] ELECTRON VELOCITY AND NEGATIVE DIFFERENTIAL MOBILITY IN ALGAAS/GAAS MODULATION-DOPED HETEROSTRUCTURES [J].

MASSELINK, WT ;

BRASLAU, N ;

WANG, WI ;

WRIGHT, SL .

APPLIED PHYSICS LETTERS, 1987, 51 (19) :1533-1535

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