CHEMISORPTION OF H ON GAAS(110) - A 1ST-PRINCIPLES CALCULATION

被引：26

作者：

BERTONI, CM

NARDELLI, MB

BERNARDINI, F

FINOCCHI, F

MOLINARI, E

机构：

[1] CNR,IST OM CORBINO,I-00189 ROME,ITALY

[2] SCUOLA INT SUPER STUDI AVANZATI,ISAS,I-34014 TRIESTE,ITALY

来源：

EUROPHYSICS LETTERS | 1990年 / 13卷 / 07期

关键词：

D O I：

10.1209/0295-5075/13/7/014

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We calculate the equilibrium structure of a monolayer of H chemisorbed on GaAs(llO), and show that it is characterized by the full removal of the substrate relaxation and by a countemelaxation of-- 5". The corresponding vibration frequencies of the H-substrate bonds and the chemisorption-induced changes in the electronic structure are also calculated, and are found to be in good agreement with the available spectroscopical data. © 1990 IOP Publishing Ltd.

引用

页码：653 / 658

页数：6

共 18 条

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