HYDROGEN ADSORPTION ON COMPOUND SEMICONDUCTOR SURFACES

被引:7
作者
BERTONI, CM [1 ]
NARDELLI, MB [1 ]
MOLINARI, E [1 ]
机构
[1] CNR,IST ACUST OM CARBINO,I-00189 ROME,ITALY
关键词
D O I
10.1016/S0042-207X(05)80155-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present the results of the total-energy calculations for different adsorption geometries of atomic hydrogen on GaAs (110) and the corresponding changes in the surface electronic states. In particular we discuss the problem of the quenching of the substrate relaxation. © 1990 Pergamon Press plc.
引用
收藏
页码:663 / 666
页数:4
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