INFRARED EVIDENCE FOR INHOMOGENEITY IN SIO2-FILMS GROWN BY PLASMA-ASSISTED OXIDATION OF SI

被引：4

作者：

MARTINET, C

DEVINE, RAB

机构：

[1] France Télécom-CNET, BP 98

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 18期

关键词：

D O I：

10.1063/1.114296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The longitudinal optic vibrational mode associated with the asymmetric stretch of the bridging oxygen atom has been studied in amorphous SiO2 grown by plasma assisted oxidation of Si. In films less than or equal to 70 nm thick the mode is observed displaced by -6 cm(-1) with respect to the bulk value (1256 cm(-1)). Deconvolution of the spectra combined with chemical etchback of the films shows that they are inhomogeneous, the peak shift increasing to -12 cm(-1) near the Si/SiO2 interface in films thicker than similar to 20 nm. (C) 1995 American Institute of Physics.

引用

页码：2696 / 2698

页数：3

共 15 条

[11]

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[12] THEORY FOR THE PLASMA ANODIZATION OF SILICON UNDER CONSTANT VOLTAGE AND CONSTANT CURRENT CONDITIONS [J].