ANALYSIS OF TRANSMISSION ELECTRON-MICROSCOPY IMAGES OF HYDROGEN PLATELETS IN PROTON-BOMBARDED GAAS

被引：23

作者：

NEETHLING, JH ^{[1
]}

SNYMAN, HC ^{[1
]}

BALL, CAB ^{[1
]}

机构：

[1] UNIV PORT ELIZABETH, DEPT APPL MATH, PORT ELIZABETH 6000, SOUTH AFRICA

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.340060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：704 / 711

页数：8

相关论文

共 39 条

[11] INSITU TEM OBSERVATIONS OF LOOP PUNCHING FROM HELIUM PLATELET CAVITIES IN MOLYBDENUM
EVANS, JH
VANVEEN, A
CASPERS, LM
[J]. SCRIPTA METALLURGICA, 1983, 17 (04): : 549 - 553
[12] OPTICAL WAVEGUIDING IN PROTON-IMPLANTED GAAS
GARMIRE, E
STOLL, H
YARIV, A
HUNSPERGER, RG
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (03) : 87 - +
[13] GIBBONS JF, 1975, PROJECTED RANGE STAT
[14] HIRSCH PB, 1965, ELECTRON MICROSCOPY
[15] Hirth J.P., 1982, THEORY DISLOCATIONS
[16] Defects in Epitaxial Films of Semiconducting Compounds with the Sphalerite Structure
Holt, D. B.
[J]. JOURNAL OF MATERIALS SCIENCE, 1966, 1 (03) : 280 - 295
[17] PASSIVATION OF THE DOMINANT DEEP LEVEL (EL2) IN GAAS BY HYDROGEN
LAGOWSKI, J
KAMINSKA, M
PARSEY, JM
GATOS, HC
LICHTENSTEIGER, M
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1078 - 1080
[18] CALCULATIONS OF POINT DEFECT CONCENTRATIONS AND NONSTOICHIOMETRY IN GAAS
LOGAN, RM
HURLE, DTJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) : 1739 - &
[19] STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED GAAS AND REDISTRIBUTION OF CR DURING ANNEALING
MAGEE, TJ
KAWAYOSHI, H
ORMOND, RD
CHRISTEL, LA
GIBBONS, JF
HOPKINS, CG
EVANS, CA
DAY, DS
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (11) : 906 - 908
[20] MAHAN BH, 1965, U CHEM, P61

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