CORRELATION BETWEEN DEGRADATION AND DEVICE CHARACTERISTIC CHANGES IN INGAASP/INP BURIED HETEROSTRUCTURE LASERS

被引：21

作者：

FUKUDA, M

IWANE, G

机构：

[1] NTT, Atsugi, Jpn, NTT, Atsugi, Jpn

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 04期

关键词：

D O I：

10.1063/1.336537

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

LASERS, SEMICONDUCTOR

引用

页码：1031 / 1037

页数：7

共 12 条

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[8] RELIABILITY OF INGAASP/INP BURIED HETEROSTRUCTURE 1.3-MU-M LASERS [J].

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[9] SOME ASPECTS OF BONDING-SOLDER DETERIORATION OBSERVED IN LONG-LIVED SEMICONDUCTOR-LASERS - SOLDER MIGRATION AND WHISKER GROWTH [J].

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[10]

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