LIQUID-PHASE EPITAXIAL-GROWTH OF (ALZGA1-Z)XIN1-XASYP1-Y PENTANARY ON (100)GAAS SUBSTRATE USING A 2-PHASE SOLUTION TECHNIQUE

被引：7

作者：

KAWANISHI, H

SUZUKI, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 05期

关键词：

D O I：

10.1063/1.95321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：560 / 562

页数：3

共 11 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS [J].

ASAHI, H ;

KAWAMURA, Y ;

NAGAI, H .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4928-4931

[2] LUMINESCENCE, LASER, AND CARRIER-LIFETIME BEHAVIOR OF CONSTANT-TEMPERATURE LPE IN1-XGAXP (CHI=0.52) GROWN ON (100)GAAS [J].

CAMPBELL, JC ;

HITCHENS, WR ;

HOLONYAK, N ;

LEE, MH ;

LUDOWISE, MJ ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1974, 24 (07) :327-330

[3]

CASEY HC, 1978, HETEROSTRUCTURE LA B

[4] ROOM-TEMPERATURE PULSED OPERATION OF ALGALNP GALNP ALGALNP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

HINO, I ;

GOMYO, A ;

KOBAYASHI, K ;

SUZUKI, T ;

NISHIDA, K .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :987-989

[5] LPE GROWTH OF GAINASP ON (100)GAAS BY A 2-PHASE-SOLUTION TECHNIQUE [J].

KAWANISHI, H ;

SUZUKI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (01) :L52-L54

[6] ROOM-TEMPERATURE PULSED OPERATION OF GAXIN1-XASYP1-Y/GAXIN1-XASYP1-Y DH VISIBLE INJECTION-LASER GROWN ON (100) GAAS BY A 2-PHASE-SOLUTION TECHNIQUE [J].

KAWANISHI, H ;

AOTA, T ;

IWAKAMI, T .

ELECTRONICS LETTERS, 1984, 20 (06) :263-264

[7]

KAZUMURA M, 1983, JPN J APPL PHYS 1, V22, P654, DOI 10.1143/JJAP.22.654

[8] FABRICATION AND VISIBLE-LIGHT-EMISSION CHARACTERISTICS OF ROOM-TEMPERATURE-OPERATED INGAPAS DH DIODE-LASERS GROWN ON GAAS SUBSTRATES [J].

MUKAI, S ;

YAJIMA, H ;

SHIMADA, J .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) :L729-L732

[9] IMPORTANCE OF LATTICE MISMATCH IN GROWTH OF GAXIN1-XP EPITAXIAL CRYSTALS [J].

STRINGFELLOW, GB .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3455-+

[10] LATTICE-MATCHED LPE GROWTH OF IN1-XGAXP1-YASY LAYERS ON (100) GAAS SUBSTRATES [J].

SUZUKI, A ;

KYURAGI, H ;

MATSUMURA, S ;

MATSUNAMI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) :L207-L210

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