NUCLEATION OF MISFIT DISLOCATIONS IN STRAINED-LAYER INGAAS ON GAAS

被引：32

作者：

GREEN, GS

TANNER, BK

BARNETT, SJ

EMENY, M

PITT, AD

WHITEHOUSE, CR

CLARK, GF

机构：

[1] SERC,DARESBURY LAB,WARRINGTON WA4 4AD,CHESHIRE,ENGLAND

[2] ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCS,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1990年 / 62卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1080/09500839008215049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Misfit dislocations at the interface of a thin epitaxial layer of In0.18Ga0.82As on GaAs have been studied by glancing incidence double-crystal synchrotron X-ray topography. The misfit dislocation density increases dramatically as the layer thickness increases from 17 to 18nm across the sample. Clear evidence for the nucleation of misfit dislocations at threading dislocations from the substrate is presented. © 1990 Taylor & Francis Group, LLC.

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页码：131 / 137

页数：7

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