MEASUREMENT AND ANALYSIS OF GAAS-MESFET PARASITIC CAPACITANCES

被引：25

作者：

ANHOLT, R ^{[1
]}

SWIRHUN, S ^{[1
]}

机构：

[1] HONEYWELL INC,CTR SYST & RES,BLOOMINGTON,MN 55420

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1991年 / 39卷 / 07期

关键词：

Semiconducting Gallium Arsenide--Ion Implantation - Transistors; Field Effect;

D O I：

10.1109/22.85397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

From S-parameter measurements and subsequent equivalent-circuit parameter extraction for a series of 0.25-mu-m, ion-implanted GaAs MESFET's with different widths and different gate-source and drain-source spacings, parasitic FET pad capacitances and interelectrode capacitances have been separated from active-FET capacitances. The active-FET fringe capacitances extracted at pinch-off are compared with results from two-dimensional Poisson simulations.

引用

页码：1247 / 1251

页数：5

共 11 条

[1]

ALEXOPOULOS NG, 1980, IEEE T MICROW THEORY, V28, P459, DOI 10.1109/TMTT.1980.1130101

[2] A PROCESS AND DEVICE MODEL FOR GAAS-MESFET TECHNOLOGY - GATES [J].