EXCIMER-LASER PROCESSING OF INDIUM-TIN-OXIDE FILMS - AN OPTICAL INVESTIGATION

被引:211
作者
SZORENYI, T
LAUDE, LD
BERTOTI, I
KANTOR, Z
GERETOVSZKY, Z
机构
[1] HUNGARIAN ACAD SCI,LASER PHYS RES GRP,H-6720 SZEGED,HUNGARY
[2] HUNGARIAN ACAD SCI,INORGAN CHEM RES LAB,H-1518 BUDAPEST,HUNGARY
[3] UNIV MONS,B-7000 MONS,BELGIUM
关键词
D O I
10.1063/1.360567
中图分类号
O59 [应用物理学];
学科分类号
摘要
dc sputtered indium-tin-oxide films have been excimer laser irradiated at subablation threshold fluences (<510 mJ/cm(2)). Optical characterization of irradiated products has been performed aiming at resolving the finer structure appearing in the IR-visible absorption spectra, as a function of laser fluence, and assigning such features to specific electronic defects which are produced upon irradiation. Four individual Gaussian-like contributions to absorption spectra are identified at 0.7, 1.0, 1.6, and 2.6 eV, the intensity of which is observed to vary with fluence. Being absent in the original films and emerging in optical spectra at fluences exceeding 300 mJ/cm(2), the 2.6 eV contribution is most characteristic to excimer laser processing and is responsible for the darkening of the film. Thermal model calculations reveal that such defects are produced only upon melting and fast resolidification of the film. The evolution of the chemistry actually taking place in the film upon irradiation is followed by x-ray photoelectron spectroscopic analysis. A chemical approach to the production of such defects is proposed in which oxygen displacement in the atomic matrix leads to the formation of neutral ternary complexes of the type SnIn2O4. (C) 1995 American Institute of Physics.
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页码:6211 / 6219
页数:9
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