INTERMETALLIC COMPOUND FORMATION IN THIN-FILM AND IN BULK SAMPLES OF THE NI-SI BINARY-SYSTEM

被引：99

作者：

TU, KN

OTTAVIANI, G

GOSELE, U

FOLL, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.332034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：758 / 763

页数：6

共 22 条

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[7] LATTICE IMAGING OF SILICIDE-SILICON INTERFACES AND THE INTERPRETATION OF INTERFACIAL DEFECTS [J].

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[8]

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[9]

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[10]

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