ELECTRON-BEAM ANNEALING OF SEMICONDUCTORS BY MEANS OF A SPECIFICALLY DESIGNED ELECTRON-GUN

被引：7

作者：

LULLI, G

MERLI, PG

机构：

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1983年 / 9卷 / 1-3期

关键词：

D O I：

10.1016/0254-0584(82)90026-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：285 / 294

页数：10

共 14 条

[1]

APPLETON BR, 1982, LASER ELECTRON BEAM

[2]

BARBIER D, 1981, J MICROSC SPECT ELEC, V6, P513

[3]

BENTINI GG, 1980, LASER ELECTRON BEAM, P272

[4]

Cembali G. F., 1982, Fourth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference, P1013

[5] SELF-ANNEALING OF ION-IMPLANTED SILICON - 1ST EXPERIMENTAL RESULTS [J].

CEMBALI, GF ;

MERLI, PG ;

ZIGNANI, F .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :808-810

[6] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

CSEPREGI, L ;

KENNEDY, EF ;

GALLAGHER, TJ ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[7] ION-BEAM ANNEALING OF SEMICONDUCTORS [J].

HODGSON, RT ;

BAGLIN, JEE ;

PAL, R ;

NERI, JM ;

HAMMER, DA .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :187-189

[8]

LULLI G, 1981, OPTIK, V60, P29

[9]

LULLI G, 1982, P ESSDERC 82, V82, P237

[10]

LULLI G, UNPUB J APPL PHYS

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