AREA-SELECTIVE ALUMINUM PATTERNING USING ATOMIC-HYDROGEN RESIST

We have proposed atomic-scale lithographic technology using atomic hydrogen resist. The key features of the atomic hydrogen resist process are (1) patterning of monolayer-thick terminated H on a Si surface by electron beam exposure and (2) selective growth of Al on remaining terminated H by low-pressure chemical vapor deposition using (CH3)2AlH and H-2. In the electron-beam-exposed area, the terminated H on Si is removed and the Si surface is activated. Then the activated Si surface is oxidized in nanometer thickness in a clean-room air environment. The Al is selectively deposited on the remaining terminated-H region. A clear Al pattern has been successfully formed by the atomic hydrogen resist process.