INFLUENCE OF PROTON IMPLANTATION ON THE PROPERTIES OF CUINSE2 SINGLE-CRYSTALS (II)

被引：21

作者：

YAKUSHEV, MV ^{[1
]}

NEUMANN, H ^{[1
]}

TOMLINSON, RD ^{[1
]}

RIMMER, P ^{[1
]}

LIPPOLD, G ^{[1
]}

机构：

[1] UNIV LEIPZIG, FACHBEREICH PHYS, D-04103 LEIPZIG, GERMANY

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1994年 / 29卷 / 03期

关键词：

D O I：

10.1002/crat.2170290328

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Copper deficient p-type conducting CuInSe2 single crystals were implanted with 40 keV protons in the fluence range from 2.5 . 10(14) to 1.5 . 10(16) cm-2. Over the whole fluence range the implanted layers were n-type conducting which is ascribed to passivation of the acceptors due to copper vacancies and formation of donors by hydrogen atoms located at interstitial positions. The thermal stability of the conductivity changes due to proton implantation is limited to temperatures below 100-degrees-C.

引用

页码：417 / 426

页数：10

共 53 条

[41] INFRARED STUDY OF PROTON IMPLANTED GAP SINGLE-CRYSTALS [J].

SOBOTTA, H ;

NEUMANN, H ;

RIEDE, V ;

ASCHERON, C ;

NOBES, MJ .

CRYSTAL RESEARCH AND TECHNOLOGY, 1988, 23 (10-11) :1371-1375

[42] LOCALIZED VIBRATIONAL-MODES IN PROTON AND DEUTERON IMPLANTED GAP SINGLE-CRYSTALS [J].

SOBOTTA, H ;

NEUMANN, H ;

RIEDE, V ;

ASCHERON, C ;

NEELMEIJER, C .

SOLID STATE COMMUNICATIONS, 1990, 74 (01) :49-53

[43] HYDROGEN VIBRATIONS IN ZNSE [J].

TATARKIEWICZ, J ;

BREITSCHWERDT, A ;

WITOWSKI, AM ;

HARTMANN, H .

SOLID STATE COMMUNICATIONS, 1988, 68 (12) :1081-1084

[44]

Tomlinson R. D., 1992, 11TH P EC PHOT SOL E, P791

[45] CHANGES IN THE OPTOELECTRONIC PROPERTIES OF CUINSE2 FOLLOWING ION-IMPLANTATION [J].

TOMLINSON, RD ;

HILL, AE ;

IMANIEH, M ;

PILKINGTON, RD ;

ROODBARMOHAMMADI, A ;

SLIFKIN, MA ;

YAKUSHEV, MV .

JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (09) :659-663

[46] ELECTRICAL-PROPERTIES OF CUINSE2 SINGLE-CRYSTALS IMPLANTED WITH XENON [J].

TOMLINSON, RD ;

YAKUSHEV, MV ;

NEUMANN, H .

CRYSTAL RESEARCH AND TECHNOLOGY, 1993, 28 (02) :267-272

[47] AMPHOTERIC NATIVE DEFECTS IN SEMICONDUCTORS [J].

WALUKIEWICZ, W .

APPLIED PHYSICS LETTERS, 1989, 54 (21) :2094-2096

[48] THE INTERSTITIAL HYDROGEN-ATOM IN GALLIUM-PHOSPHIDE [J].

WONG, KF ;

KHOO, GS ;

ONG, CK .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 (24) :4373-4379

[49] INFLUENCE OF PROTON IMPLANTATION ON THE PROPERTIES OF CUINSE2 SINGLE-CRYSTALS (I) - ION CHANNELING STUDY OF LATTICE DAMAGE [J].

YAKUSHEV, MV ;

TOMLINSON, RD ;

NEUMANN, H .

CRYSTAL RESEARCH AND TECHNOLOGY, 1994, 29 (01) :125-132

[50]

ZAVADA JM, 1988, MATER RES SOC S P, V104, P331

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