INFLUENCE OF PROTON IMPLANTATION ON THE PROPERTIES OF CUINSE2 SINGLE-CRYSTALS (I) - ION CHANNELING STUDY OF LATTICE DAMAGE

被引：19

作者：

YAKUSHEV, MV

TOMLINSON, RD

NEUMANN, H

机构：

[1] Department of Electronic and Electrical Engineering, University of Salford, Salford

[2] Leipzig, D-04347

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1994年 / 29卷 / 01期

关键词：

D O I：

10.1002/crat.2170290127

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The lattice damage of p-type CuInSe2 single crystals implanted with 10 keV protons in the fluence range from 2.5.10(14) to 8.10(15) cm(-2) was investigated using the Rutherford backscattering/channeling technique. At proton fluences up to about 2.10(15) Cm-2 radiation annealing of the defects is observed which is ascribed to very high defect concentrations in the unimplanted samples. At higher fluences radiation damage occurs but the concentration of radiation induced defects ramains low. There are indications that selenium interstitials or defect complexes with selenium interstitials involved are stable defects at room temperature.

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页码：125 / 132

页数：8

相关论文

共 36 条

[1] CHARACTERIZATION OF THE DEFECT LEVELS IN COPPER INDIUM DISELENIDE [J].

ABOUELFOTOUH, FA ;

MOUTINHO, H ;

BAKRY, A ;

COUTTS, TJ ;

KAZMERSKI, LL .

SOLAR CELLS, 1991, 30 (1-4) :151-160

[2] PROTON-BEAM MODIFICATION OF SELECTED AIIIBV COMPOUNDS [J].

ASCHERON, C .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 124 (01) :11-55

[3] PASSIVATION OF BULK TRAPPING LEVELS IN CADMIUM TELLURIDE BY PROTON IMPLANTATION [J].

BIGLARI, B ;

SAMIMI, M ;

HAGEALI, M ;

KOEBEL, JM ;

SIFFERT, P .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) :1112-1117

[4] PASSIVATION OF HIGH-RESISTIVITY CADMIUM TELLURIDE BY HYDROGEN IMPLANTATION [J].

BIGLARI, B ;

SAMIMI, M ;

HAGEALI, M ;

SIFFERT, P .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (01) :47-52

[5] EFFECTS OF PREFERENTIAL PAIRING AND ITS DETECTION USING ELECTRON RADIATION DAMAGE [J].

BRYANT, FJ ;

HAGSTON, WE ;

RADFORD, CJ .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1971, 323 (1552) :127-&

[6] NEUTRALIZATION OF DEFECTS AND DOPANTS IN III-V SEMICONDUCTORS [J].

CHEVALLIER, J ;

CLERJAUD, B ;

PAJOT, B .

SEMICONDUCTORS AND SEMIMETALS, 1991, 34 (0C) :447-510

[7] THE SELECTIVE TRAPPING OF ARSENIC INTERSTITIAL ATOMS BY IMPURITIES IN GALLIUM-ARSENIDE [J].

COLLINS, JD ;

GLEDHILL, GA ;

MURRAY, R ;

NANDHRA, PS ;

NEWMAN, RC .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1989, 151 (02) :469-477

[8] A 1ST STUDY OF RADIATION-DAMAGE DUE TO OXYGEN IMPLANTATION IN CUINSE2 SINGLE-CRYSTALS [J].

CROWTHER, VP ;

IMANIEH, M ;

STEPHENS, GA ;

TOMLINSON, RD .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 67 (1-4) :428-431

[9] EFFECT OF HYDROGEN ON ELECTRICAL TRANSPORT-PROPERTIES OF POLYCRYSTALLINE CULNTE2 THIN-FILMS [J].

DAWAR, AL ;

KUMAR, A ;

KUMAR, P ;

MATHUR, PC .

JOURNAL OF MATERIALS SCIENCE, 1983, 18 (03) :815-820

[10]

Igalson M., 1992, 11TH P E C PHOT SOL, P874

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