INFLUENCE OF PROTON IMPLANTATION ON THE PROPERTIES OF CUINSE2 SINGLE-CRYSTALS (II)

被引：21

作者：

YAKUSHEV, MV ^{[1
]}

NEUMANN, H ^{[1
]}

TOMLINSON, RD ^{[1
]}

RIMMER, P ^{[1
]}

LIPPOLD, G ^{[1
]}

机构：

[1] UNIV LEIPZIG, FACHBEREICH PHYS, D-04103 LEIPZIG, GERMANY

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1994年 / 29卷 / 03期

关键词：

D O I：

10.1002/crat.2170290328

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Copper deficient p-type conducting CuInSe2 single crystals were implanted with 40 keV protons in the fluence range from 2.5 . 10(14) to 1.5 . 10(16) cm-2. Over the whole fluence range the implanted layers were n-type conducting which is ascribed to passivation of the acceptors due to copper vacancies and formation of donors by hydrogen atoms located at interstitial positions. The thermal stability of the conductivity changes due to proton implantation is limited to temperatures below 100-degrees-C.

引用

页码：417 / 426

页数：10

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