GROWTH OF CUBIC SIC FILMS USING 1,3-DISILABUTANE

被引：31

作者：

BOO, JH ^{[1
]}

YU, KS ^{[1
]}

KIM, Y ^{[1
]}

YEON, SH ^{[1
]}

JUNG, IN ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,ORGANOMET CHEM LAB,SEOUL 130650,SOUTH KOREA

来源：

CHEMISTRY OF MATERIALS | 1995年 / 7卷 / 04期

关键词：

D O I：

10.1021/cm00052a014

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cubic SiC films have been grown on the Si(100) and Si(111) substrates in the temperature range 650-900 degrees C by low-pressure organometallic chemical vapor deposition (LP-OMCVD) using 1,3-disilabutane, H3SiCH2SiH2CH3, as a single molecular precursor. Polycrystalline cubic SiC films were formed on Si(100) substrates at such a low temperature as 650 degrees C. The films obtained on carbonized Si(100) substrates at temperatures higher than 850 degrees C show improved crystallinity in their X-ray diffraction patterns. On the other hand, highly oriented SiC films in the [111] direction were formed on carbonized Si(111) substrates at 900 degrees C. The growth temperatures in this study are much lower than those previously reported, and this is the first report of cubic SiC films grown using 1,3-disilabutane.

引用

页码：694 / 698

页数：5

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