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A REVIEW OF THE EPITAXIAL-GROWTH OF COMPOUND AND ALLOY SEMICONDUCTORS BY SPUTTER DEPOSITION

被引：1
作者：
GREENE, JE [1 ]
机构：
[1] UNIV ILLINOIS,MAT RES LAB,DEPT MET,URBANA,IL 61801
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期
关键词：
D O I：
10.1116/1.572358
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：427 / 427
页数：1
相关论文
共 7 条
[1]   GROWTH OF HIGH-QUALITY EPITAXIAL GE FILMS ON (100) SI BY SPUTTER DEPOSITION [J].
BAJOR, G ;
CADIEN, KC ;
RAY, MA ;
GREENE, JE ;
VIJAYAKUMAR, PS .
APPLIED PHYSICS LETTERS, 1982, 40 (08) :696-698
[2]   MODEL-CALCULATIONS FOR ACCELERATED AS ION DOPING OF SI DURING MOLECULAR-BEAM EPITAXY [J].
BAJOR, G ;
GREENE, JE .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1579-1582
[3]   MECHANISMS OF EPITAXIAL GAAS CRYSTAL-GROWTH BY SPUTTER DEPOSITION - ROLE OF ION SURFACE INTERACTIONS [J].
BARNETT, SA ;
GREENE, JE .
SURFACE SCIENCE, 1983, 128 (2-3) :401-416
[4]   EPITAXIAL CRYSTAL-GROWTH BY SPUTTER DEPOSITION - APPLICATIONS TO SEMICONDUCTORS .1. [J].
GREENE, JE .
CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1983, 11 (01) :47-97
[5]   A REVIEW OF RECENT RESEARCH ON THE GROWTH AND PHYSICAL-PROPERTIES OF SINGLE-CRYSTAL METASTABLE ELEMENTAL AND ALLOY SEMICONDUCTORS [J].
GREENE, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :229-237
[6]   ION SURFACE INTERACTIONS DURING VAPOR-PHASE CRYSTAL-GROWTH BY SPUTTERING, MBE, AND PLASMA-ENHANCED CVD - APPLICATIONS TO SEMICONDUCTORS [J].
GREENE, JE ;
BARNETT, SA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :285-302
[7]  
GREENE JE, UNPUB CRIT REV SOLID
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