ELECTRONIC-STRUCTURE OF SI(111)-B(SQUARE-ROOT-3XSQUARE-ROOT-3)R30-DEGREES STUDIED BY SI 2P AND B 1S CORE-LEVEL PHOTOELECTRON-SPECTROSCOPY

被引:44
作者
MCLEAN, AB
TERMINELLO, LJ
HIMPSEL, FJ
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 11期
关键词
D O I
10.1103/PhysRevB.41.7694
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An investigation of the Si(111)-B(s3 × s3) R30°system has been performed using high-resolution photoelectron spectroscopy of the Si 2p core level and polarization-dependent studies of the B 1s absorption edge. Least-squares analysis of the Si 2p core-level line shape reveals that it comprises a bulk component and a surface component shifted by 0.40+0.02 eV to higher binding energy. The exceptionally large surface-to-bulk ratio that is observed in this system suggests that the range of influence of the B atoms extends to more than 1 monolayer of Si atoms. The magnitude of the surface-to-bulk ratio is consistent with a model in which B occupies a subsurface site below a Si adatom. The B 1s edge contains a feature which is excited by the component of the electric field vector perpendicular to the surface. We argue that this arises from an electronic transition from the B 1s level into an empty surface orbital, orientated perpendicularly to the surface. We also study the change of the electronic structure as the surface is covered with Si, thereby producing a buried -doping layer. © 1990 The American Physical Society.
引用
收藏
页码:7694 / 7700
页数:7
相关论文
共 18 条
  • [1] SURFACE DOPING AND STABILIZATION OF SI(111) WITH BORON
    BEDROSSIAN, P
    MEADE, RD
    MORTENSEN, K
    CHEN, DM
    GOLOVCHENKO, JA
    VANDERBILT, D
    [J]. PHYSICAL REVIEW LETTERS, 1989, 63 (12) : 1257 - 1260
  • [2] SQUARE-ROOT-3 X SQUARE-ROOT-3 RECONSTRUCTION ALONG THE (111) FACE OF HIGHLY BORON-DOPED SI UPON VACUUM ANNEALING
    BENSALAH, S
    LACHARME, JP
    SEBENNE, CA
    [J]. SURFACE SCIENCE, 1989, 211 (1-3) : 586 - 592
  • [3] AN ELLIPSOIDAL MIRROR DISPLAY ANALYZER SYSTEM FOR ELECTRON-ENERGY AND ANGULAR MEASUREMENTS
    EASTMAN, DE
    DONELON, JJ
    HIEN, NC
    HIMPSEL, FJ
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 172 (1-2): : 327 - 336
  • [4] STRUCTURE DETERMINATION OF THE SI(111) - B(SQUARE-ROOT-3 X SQUARE-ROOT-3)R 30-DEGREES SURFACE - SUBSURFACE SUBSTITUTIONAL DOPING
    HEADRICK, RL
    ROBINSON, IK
    VLIEG, E
    FELDMAN, LC
    [J]. PHYSICAL REVIEW LETTERS, 1989, 63 (12) : 1253 - 1256
  • [5] HEADRICK RL, UNPUB
  • [6] DETERMINATION OF THE FERMI-LEVEL PINNING POSITION AT SI(111) SURFACES
    HIMPSEL, FJ
    HOLLINGER, G
    POLLAK, RA
    [J]. PHYSICAL REVIEW B, 1983, 28 (12): : 7014 - 7018
  • [7] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE
    HIMPSEL, FJ
    MCFEELY, FR
    TALEBIBRAHIMI, A
    YARMOFF, JA
    HOLLINGER, G
    [J]. PHYSICAL REVIEW B, 1988, 38 (09): : 6084 - 6096
  • [8] 1ST RESULTS FROM A 6 M/10 M TOROIDAL GRATING MONOCHROMATOR FOR SOFT X-RAYS
    HIMPSEL, FJ
    JUGNET, Y
    EASTMAN, DE
    DONELON, JJ
    GRIMM, D
    LANDGREN, G
    MARX, A
    MORAR, JF
    ODEN, C
    POLLAK, RA
    SCHNEIR, J
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 222 (1-2) : 107 - 110
  • [9] HIMPSEL FJ, 1988, IN PRESS CORE LEVEL
  • [10] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND AUGER-ELECTRON SPECTROSCOPIC STUDY ON B/SI(111) SURFACES
    HIRAYAMA, H
    TATSUMI, T
    AIZAKI, N
    [J]. SURFACE SCIENCE, 1988, 193 (1-2) : L47 - L52